MRF581 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The MRF581 is Designed for
High current low Power Amplifier
Applications up to 1.0 GHz.
PACKAGE STYLE
Dim. Are in mm
FEATURES:
• Low Noise Figure
• Low Intermodulation Distortion
• High Gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
200 mA
V_CBO
36 V
V_CEO
18 V
V_EBO
2.5 V
P_DISS
2.5 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 1.0 mA
BV_EBO
I_E = 100 µA
I_EBO
V_EB = 2.0 V
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
MINIMUM TYPICAL MAXIMUM
36
18
2.5
100
100
50
200
UNITS
V
V
V
µA
µA
---
C_cb
V_CB = 10 V
f = 1.0 MHz
1.4
2.0
pF
G_P
V_CC = 10 V
I_C = 50
f = 0.5 GHz
13
15.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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