MRF572 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON NPN RF TRANSISTOR

MRF572
SILICON NPN RF TRANSISTOR
DESCRIPTION:
The MRF572 is Designed for Low
Noise General Purpose VHF,UHF
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I_C
60 mA
V_CE
P_DISS
T_J
T_STG
12 V
500 mW @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
PACKAGE STYLE 100MIL CERAMIC STRIPLINE
1 = Collector 2 & 4 = Emitter
3 = Base
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
I_CBO
V_CB = 8.0 V
BV_EBO
I_E = 50 µA
h_FE
V_CE = 8.0 V
I_C = 10 mA
C_cb
V_CB = 8.0 V
f = 1.0 MHz
f_t
V_CE = 8.0 V
I_C = 25 mA
f = 1.0 GHz
|S21E|²
V_CE = 8.0 V
I_C = 25 mA
f = 1.0 GHz
f = 2.0 GHz
GNF
V_CE = 8.0 V
I_C = 0 mA
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
V_CE = 8.0 V
I_C = 0 mA
NF
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
NONE
MINIMUM TYPICAL MAXIMUM
12
20
200
1.5
30
300
0.25
8.0
16.9
12.0
16.5
12
10
1.0
1.5
2.0
2.5
UNITS
V
V
µA
V
---
pF
GHz
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1