MRF571 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF TRANSISTOR

MRF571
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF571 is Designed for low-
noise, wide dynamic range front end
amplifiers.
Applications up to 2.0 GHz.
FEATURES:
• Low Noise Figure
• High Gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
70 mA
V_CBO
20 V
V_CEO
10 V
V_EBO
3.0 V
P_DISS
1.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 0.1 mA
BV_CEO
I_C = 1.0 mA
BV_EBO
I_E = 500 µA
I_CBO
V_CB = 8.0 V
h_FE
V_CE = 5.0 V
I_C = 30 mA
MINIMUM TYPICAL MAXIMUM
20
10
2.5
10
50
300
UNITS
V
V
V
µA
---
C_cb
V_CB = 6.0 V
f = 1.0 MHz
0.7
1.0
pF
G_NF
V_CE = 6.0 V
I_C = 10 mA
f = 0.5 GHz
16.5
dB
f = 1.0 GHz
10
12
V_CE = 6.0 V
NF
I_C = 10 mA
f = 0.5 GHz
f = 1.0 GHz
1.0
1.5
2.0
dB
f = 2.0 GHz
2.8
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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