MRF553 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MRF553
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF553 is designed for
Low power amplifier applications.
FEATURES:
• 12.5 V, 175 MHz.
• P_OUT = 1.5 W
• G_P = 11.5 min.
• η = 60 % (Typ)
MAXIMUM RATINGS
I_C
500 mA
V_CB
36 V
P_DISS
3.0 W @ T_C = 75 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
41.7 °C/W
PACKAGE STYLE
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
4.45
5.21
.175
.205
B
1.91
2.54
.075
.100
C
0.84
0.99
.033
.039
D
2.46
2.64
.097
.104
E
8.84
9.73
.348
.383
F
0.20
0.31
.008
0.12
G
7.24
8.13
.285
.320
H
1.65
0.65
J
3.25
0.128
K
0.64
1.02
.025
0.40
1 = COLLECTOR
2 = EMITTER
3 = BASE
4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 5.0 mA
BV_CES
I_C = 5.0 mA
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 250 mA
C_CB
V_CB = 10 V
f = 1.0 MHz
G_PE
V_CE = 12 V
P_OUT = 1.5 W
f = 175 MHz
η
ψ
MINIMUM TYPICAL MAXIMUM
16
36
36
4.0
5.0
30
200
UNITS
V
V
V
V
mA
---
12
20
pF
11.5
13
dB
50
60
%
10:1
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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