MRF545 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF545
PNP SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MRF545 is designed for
High Frequency and medium and high
resolution color video display monitors
as well as other Applications requiring
high breakdown characteristics.
MAXIMUM RATINGS
I_C
400 mA
V_CE
70 V
V_CB
100 V
P_DISS
3.5 W @ T_C = 25 °C
20 mW/°C @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
50 °C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)
CHARACTERISTICS TA = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CE = 80 V
I_CES
V_CE = 80 V
h_FE
V_CE = 6.0 V I_C = 50 mA
MINIMUM
70
100
3.0
15
f_t
V_CB = 25 V I_C = 50 mA
C_OB
V_CB = 10 V
f = 250 MHz
f = 1.0 MHz
1000
G_{U max}
MAG
[S₂₁]²
V_CB = 25 V I_C = 50 mA
f = 200 MHz
11.5
NONE
TYPICAL MAXIMUM
20
1.0
100
1400
2.5
14
14.5
12.5
UNITS
V
V
V
µA
µA
---
MHz
pF
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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