MRF5175 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – 1NPN SILICON RF POWER TRANSISTOR

MRF5175
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF5175 is Designed for
High Power Class C Amplifier in, 225
to 400 MHz Military Communication
Equipment.
FEATURES:
• Class C Operation
• P_G = 11 dB at 5.0 W/400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
1.0 A
V_CB
60 V
V_CE
P_DISS
T_J
T_STG
θ_JC
33 V
12 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
12 ^OC/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
C
E
F
G
H
K
J
I
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 30 mA
BV_CES
I_C = 30 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 250 mA
C_ob
V_CB = 30 V
f = 1.0 MHz
P_G
η_D
V_CC = 28 V
P_OUT = 5.0 W
f = 400 MHz
MINIMUM TYPICAL MAXIMUM
33
60
4.0
0.5
10
100
15
11
50
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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