MRF5174 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

MRF5174
NPN RF POWER TRANSISTOR
DESCRIPTION:
The MRF5174 is a Common Emitter
Device Designed for Class A, AB and
C Amplifier Applications in the 225 to
400 MHz Band.
FEATURES INCLUDE:
• High Gain
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
0.5 A
V_CBO
P_DISS
T_J
T_STG
θ_JC
40 V
8.75 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
20 ^OC/W
PACKAGE STYLE .280 4L STUD
A
45°
C
B^E
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
40
28
3.5
500
20
120
UNITS
V
V
V
µA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
5.0
pF
P_G
V_CE = 28 V
η_C
P_OUT = 2.0 W
f = 400 MHz
12
50
13
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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