MRF517 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF517
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MRF517 is Designed for
High Linearity Class A Amplifier
Applications in the 100 to 500 MHz
Frequency Range.
PACKAGE STYLE TO-39
MAXIMUM RATINGS
I_C
150 mA
V_CBO
P_DISS
T_J
T_STG
θ_JC
35 V
2.5 W @ T_C = 50 ^OC
20 mW/^OC @ T_C = 50 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
50 ^OC/W
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)
CHARACTERISTICS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
R_BE = 330 Ω
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 15 V
h_FE
V_CB = 10 V I_C = 50 mA
MINIMUM
20
25
35
2.5
40
f_t
V_CB = 15 V I_C = 50 mA
C_OB
V_CB = 10 V
f = 200 MHz
f = 1.0 MHz
G_PE
11.5
NF
V_CB = 15 V I_C = 50 mA
f = 500 MHz
I_P3
NONE
TYPICAL MAXIMUM
100
200
2700
3.0
4.0
+33
UNITS
V
V
V
µA
---
MHz
pF
dB
dB
dBm
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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