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MRF479 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR
MRF479
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF479 is Designed for
12.5 V FM Large-Signal Amplifier
Applications to 50 MHz.
MAXIMUM RATINGS
IC
2.0 A (CONT)
VCE
18 V
VCB
PDISS
TSTG
θJC
36 V
30 W @ TC = 25 OC
-65 OC to +150 OC
5.85 OC/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 20 mA
BVCBO
IC = 20 mA
BVEBO
IE = 5.0 mA
ICES
VCES = 15 V
hFE
VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5.0
30
50
UNITS
V
V
V
mA
---
Cob
VCB = 12.5 V
f = 1.0 MHz
120
155
pF
GPE
VCC = 12.5 V
ICQ = 20 mA Pout = 15 W (PEP)
η
f1 = 30 MHz
f2 = 30.001 MHz
12
40
d3
14
dB
%
-30
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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