MRF476 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF476
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF476 is Designed for
12.5 V FM Large-Signal Amplifier
Applications to 30 MHz.
MAXIMUM RATINGS
I_C
1.0 A
V_CE
18 V
V_CB
36 V
P_DISS
10 W @ T_C = 25 °C
T_STG
-65 °C to +150 °C
θ_JC
17.5 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = COLLECTOR
3 = EMITTER TAB = COLLECTOR
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 25 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 250 mA
MINIMUM TYPICAL MAXIMUM
18
36
4.0
0.5
10
50
UNITS
V
V
V
mA
---
C_ob
V_CB = 12.5 V
f = 1.0 MHz
25
35
pF
G_PE
η
V_CC = 12.5 V
f₁ = 30 MHz
ICQ = 20 mA P_out = 3.0 W (PEP)
f₂ = 30.001 MHz
15
40
IMD
18
-35
-30
dB
%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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