MRF475 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF475
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF475 is Designed for
13.6 V FM Large-Signal Amplifier
Applications to 30 MHz.
MAXIMUM RATINGS
I_C
4.0 A
V_CE
18 V
V_CB
48 V
P_DISS
10 W @ T_C = 25 °C
T_STG
-65 °C to +150 °C
T_J
-65 °C to +150 °C
θ_JC
12.5 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = COLLECTOR
3 = EMITTER TAB = COLLECTOR
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 20 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 5.0 mA
I_CBO
V_CB = 25 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
18
48
4.0
1.0
30
60
UNITS
V
V
V
mA
---
C_ob
V_CB = 13.6 V
f = 1.0 MHz
125
145
pF
G_PE
η
V_CC = 13.6 V
f₁ = 30 MHz
I_CQ = 20 mA
P_out = 12 W (PEP)
f₂ = 30.001 MHz
10
40
IMD
12
dB
%
-30
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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