MRF460 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF460
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF460 is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
FEATURES INCLUDE:
• Omnigold™ Metalization System
• P_G = 12 dB Min. @ 30 MHz & 40 W
• Efficiency 40%
PACKAGE STYLE .500" 4L FLANGE
MAXIMUM RATINGS
I_C
215 A
V_CBO
40 V
V_CEO
20 V
V_EBO
4.0 V
P_DISS
175 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.0 °C/W
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 5.0 mA
I_CES
V_CE = 12.5 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_OB
V_CB = 12.5 V
f = 1.0 MHz
G_PE
IMD
V_CC = 12.5 V
f = 30 MHz
I_C = 4.7 A
η_C
P_OUT = 40 W(PEP)
MINIMUM TYPICAL MAXIMUM
40
20
4.0
10
20
300
350
12
15
-35
-30
40
45
UNITS
V
V
V
mA
---
pF
dB
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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