MRF450A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF450A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF450A is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
FEATURES INCLUDE:
• P_OUT = 50 W
• P_G = 11 dB Min. @ 30MHz & 50W
• Efficiency 50%
MAXIMUM RATINGS
I_C
7.5 A
V_CBO
40 V
V_CEO
20 V
V_EBO
4.0 V
P_DISS
115 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.53 °C/W
PACKAGE STYLE .500" 4L STUD
A
45°
1
B³
ØC
2
D
E
F
4
J
SEATING
I PLANE
H
G
#10-32 UNF
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.050 / 26.67
B
.220 / 5.59
.230 / 5.84
C
.495 / 12.57
.505 / 12.83
D
.003 / 0.08
.007 / 0.18
E
.160 / 4.06
.180 / 4.57
F
.622 / 15.80
G
.100 / 2.54
.130 / 3.31
H
.415 / 10.54
.425 / 10.80
I
.720 / 18.29
J
.250 / 6.35
.290 / 7.37
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 20 mA
BV_CEO
I_C = 100 mA
BV_CBO
I_C = 20 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_OB
V_CB = 15 V
G_PE
V_CC = 13.6
P_OUT = 50 W
η_C
MINIMUM TYPICAL MAXIMUM
40
20
40
4.0
10
f = 1.0 MHz
200
f = 30 MHz
11
15
50
UNITS
V
V
V
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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