MRF448 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MRF448
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF448 is Designed for
High Linearity Class AB HF Power Amplifier
Applications up to 30 MHz.
FEATURES:
• P_G = 14 dB Typical at 220 W/30 MHz
• IMD₃ = -32 dBc Typ. at 220 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
16 A
V_CBO
100 V
V_CEO
50 V
V_EBO
4.0 V
P_DISS
290 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FULL R
E
C
Ø.125 NOM.
C
B
E
H
B
E
D
GF
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10866
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CEO
V_CE = 30 V
I_CES
V_CE = 50 V
h_FE
V_CE = 10 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
100
50
4.0
5
10
10
UNITS
V
V
V
mA
mA
---
C_ob
V_CB = 50 V
f = 1.0 MHz
350
450
pF
G_P
12
dB
η_C
V_CE = 50 V
I_CQ =250 mA P_OUT = 250 W(CW)
65
%
IMD
η_C
V_CE = 50 V
I_CQ =250 mA P_OUT = 250 W(PEP)
-33
-30
dB
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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