MRF429 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MRF429
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF429 is Designed for
High voltage applications up tp 30
MHz
FEATURES:
• P_G = 13 dB min. at 150 W/30 MHz
• IMD₃ = -32 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
16 A
V_CBO
100 V
V_CEO
50 V
V_EBO
4.0 V
P_DISS
233 W @ T_C = 25 °C
T_J
-65°C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.75 °C/W
PACKAGE STYLE .500 4L FLG
FULL R
A
E
.112x45°
L
C
C
B_B
E
E
H
D
GF
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
100
100
50
4.0
10
80
UNITS
V
V
V
V
---
C_ob
V_CB = 50 V
f = 1.0 MHz
220
300
pF
G_P
13
15
dB
IMD
V_CE = 50 V
I_CQ = 3.3 A
f = 30 MHz
-35
-32
dBc
η_C
P_OUT = 150 W (PEP)
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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