MRF406 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF406
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF406 is Designed for
12.5 V 30 MHz Power Amplifier
Applications.
FEATURES INCLUDE:
• Common Emitter
• Output Power = 20 W (PEP)
MAXIMUM RATINGS
I_C
4.0 A
V_CE
20 V
V_CB
P_DISS
T_J
T_STG
θ_JC
40 V
80 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.2 ^OC/W
PACKAGE STYLE .380" 4L FLG
.112 x 45°
B
E
A
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 50 mA
BV_CBO
I_C = 50 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 12.5 V
h_FE
I_C = 1.0 A
V_CE = 5.0 V
MINIMUM TYPICAL MAXIMUM
40
40
20
4.0
5.0
10
35
C_ob
V_CB = 12.5 V
f = 1.0 MHz
200
P_out
G_PE
η
IMD
ψ
V_CE = 12.5 V
f = 30 MHz
20
V_CC = 12.5 V
I_C ≤ 1.75 A
P_out = 20 W (PEP)
12
I_cq = 25 mA
f = 30, 30.001 MHz
45
-30
V_CC = 12.5 V
I_cq = 25 mA
I_C ≤ 1.75 A
P_out = 20 W (PEP)
f = 30, 30.001 MHz
>30:1 ALL PHASE ANGLES
UNITS
V
V
V
V
mA
---
pF
W(PEP)
dB
%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1