MRF390 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF390
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF390 is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
100 - 500 MHz Military
Communications Band.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
I_C
7.0 A
V_CB
P_DISS
T_J
T_STG
θ_JC
60 V
140 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
1.25 ^OC/W
PACKAGE STYLE .400 8L FLG
G
F
E
.1925
.125
K
C
D
B
A
2 1 12
FULL R
O
23 3 2
H
I
J
4 x .060 R
N
LM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
M IN IM UM
inches / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
.735 / 18.67
.645 / 16.38
.895 / 22.73
.420 / 10.67
.003 / 0.08
.120 / 3.05
.159 / 4.04
.395 / 10.03
.030 / 0.76
.360 / 9.14
.130 / 3.30
M A X IM U M
inches / mm
.125 / 3.18
.075 / 1.91
.390 / 9.91
.765 / 19.43
.655 / 16.64
.905 / 22.99
.430 / 10.92
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10.29
1 = COLLECTOR 2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 10 mA
MINIMUM TYPICAL MAXIMUM
30
60
4.0
C_ob
V_CB = 28 V
f = 1.0 MHz
52
h_FE
V_CE = 5.0 V I_C = 1.0 A
P_g
V_CE = 28 V
P_out = 50 W
η_c
10
f = 500 MHz
7.5
8.5
55
UNITS
V
V
V
pF
---
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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