MRF342 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON POWER NPN TRANSISTOR

MRF342
SILICON POWER NPN TRANSISTOR
DESCRIPTION:
The ASI MRF342 is designed for
VHF amplifier applications operating to
150 MHz.
PACKAGE STYLE TO-220AB
MAXIMUM RATINGS
I_C
3.0 A
V_CEO
35 V
V_CBO
65 V
V_EBO
4.0 V
P_DISS
55 W @ T_C = 25 °C
T_J
-55 °C to +150 °C
T_STG
-55 °C to +150 °C
θ_JC
3.2 °C/W
1 = Base 2 = Emitter 3 = Collector
4 = Emitter
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
BV_CEO
I_C = 20 mA
35
BV_CES
I_C = 20 mA
65
BV_CBO
I_C = 20 mA
65
BV_EBO
I_E = 2.0 mA
4.0
I_CES
V_CE = 27 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
10
C_OB
V_CB = 27 V
f = 1.0 MHz
G_PE
V_CC = 13.5 V P_OUT = 6.0 W f = 136 MHz
10
G_PE
η_C
11
V_CC = 27 V
P_OUT = 24 W f = 136 MHz
50
TRANS1.SYM
TYPICAL MAXIMUM
2.0
100
20
30
11.5
12.3
60
UNITS
V
V
V
V
mA
---
pF
dB
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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