MRF340 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF340
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF340 is Designed for
VHF Radios that use Collector
Modulation in the Driver/Final
Amplifiers to Produce an Amplitude
Modulated Signal.
FEATURES INCLUDE:
• Replaces Original MRF340 in Most
Applications
• High Gain Reduces Drive
Requirements
• Economical TO-220CE Package
MAXIMUM RATINGS
I_C
1.0 A
V_CES
50 V
P_DISS
12.5 W @ T_C = 25 °C
T_STG
-55 °C to +150 °C
θ_JC
10 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 50 mA
BV_CBO
I_C = 10 mA
BV_EBO
I_E = 5.0mA
I_CES
V_CES = 25V
h_FE
V_CE = 10V
I_C = 100mA
MINIMUM TYPICAL MAXIMUM
50
50
4.0
1.0
10
200
UNITS
V
V
V
mA
---
C_OB
V_CB = 30 V
f = 1.0 MHz
15
pF
G_PE
V_CC = 13.5V
P_out = 2.0 W
f =136 MHz
10
dB
G_PE
V_CC = 27 V
η
P_out = 8.0 W_pk
f =136 MHz
13.0
15.0
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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