MRF329 Datasheet, PDF (1/1 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

MRF329
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF329 is Designed for
Wide Band Large-Signal Output and
Driver Amplifier Stages in the
100-500 MHz Frequency Range.
FEATURES INCLUDE:
• Gold Metalization
• 3:1 VSWR
• I/O Network Matching
MAXIMUM RATINGS
I_C
9.0 A (CONT)
12.0 A (PEAK)
V_CB
P_DISS
T_J
T_STG
θ_JC
60 V
270 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +150 ^OC
0.65 ^OC/W
PACKAGE STYLE .400X.425" 6L FLG.
1 & 3 = EMITTER 2 = COLLECTOR
4 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 80 mA
BV_CES
I_C = 80 mA
BV_CEO
I_C = 80 mA
BV_EBO
I_E = 8.0 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 4.0 A
MINIMUM TYPICAL MAXIMUM
60
60
30
4.0
5.0
20
80
UNITS
V
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
95
125
pF
G_PE
η
V_CC = 28 V
P_out = 100 W
f = 400 MHz
7.0
50
9.7
60
dB
%
ψ
V_CC = 28 V
P_out = 100 W
f = 400 MHz
V_SWR = 3:1
ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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