MRF323 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MRF323
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF323 is Designed for
Wide Band Large-Signal Driver and
Predriver Applications in the
200 to 500 MHz Range.
FEATURES INCLUDE:
• Gold Metalization
• 30:1 VSWR
MAXIMUM RATINGS
I_C
2.2 A (CONT)
3.0 A (PEAK)
V_CB
P_DISS
T_STG
θ_JC
60 V
55 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
3.2 ^OC/W
PACKAGE STYLE .280" 4L STUD
A
45°
C
BE
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CES
I_C = 20 mA
BV_CEO
I_C = 20 mA
BV_EBO
I_E = 2.0 mA
I_CBO
V_CB = 30 V
h_FE
I_C = 1.0 A
V_CE = 5.0 V
MINIMUM TYPICAL MAXIMUM
60
60
33
4.0
2.0
20
80
UNITS
V
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
20
24
pF
G_PE
10
11
dB
η
V_CC = 28 V
P_out = 20 W
f = 400 MHz
50
60
%
ψ
V_CC = 28 V
P_out = 20 W
f = 400 MHz
VSWR = 30:1 ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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