MRF317 Datasheet, PDF (1/1 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

MRF317
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF317 is Designed for
Class C, 28 V High Band Applications
up to 200 MHz.
FEATURES:
• Internal Input Matching Network
• P_G = 9.0 dB at 100 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CBO
65 V
V_CEO
36 V
V_CES
65 V
V_EBO
4.0 V
P_DISS
270 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.65 °C/W
PACKAGE STYLE .500 6L FLG
C
A
31
D
2x ØN
FULL R
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
24
B
E
.725/18,42
G
F
H
M IN IM U M
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
I
J
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
MAXIMUM
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = Collector 2 = Base 3&4 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
5.0
10
80
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
250
pF
P_G
V_CE = 28 V
P_OUT = 100 W
η_C
f = 150 MHz
9.0
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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