MRF314 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

MRF314
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF314 is Designed for Class C
Power Amplifier Applications up to 200
MHz.
FEATURES:
• P_G = 10 dB min. at 30 W/ 150 MHz
• Withstands 30:1 Load VSWR
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
3.4 A
V_CBO
65 V
V_CEO
35 V
V_EBO
4.0 V
P_DISS
82 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.13 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10872
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 30 mA
BV_CES
I_C = 30 mA
BV_EBO
I_E = 3.0 mA
I_CBO
V_E = 30 V
h_FE
V_CE = 5.0 V
I_C = 1.5 A
MINIMUM TYPICAL MAXIMUM
35
65
4.0
3.0
20
80
UNITS
V
V
V
mA
---
C_OB
V_CB = 30 V
f = 1.0 MHz
30
40
pF
P_G
η_C
V_CC = 28 V
ψ
P_OUT = 30 W
f = 150 MHz
10
13.5
dB
50
%
30:1 all phase angles, no degadation in output.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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