MRF313 Datasheet, PDF (1/1 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

MRF313
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The MRF313 is Designed for wide
band Amplifier Applications up to 400
MHz.
FEATURES:
• P_G = 15 dB min. at 1.0 W/ 400 MHz
• Common Emitter for Improved
Stability
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
150 mA
V_CBO
40 V
V_CEO
30 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.0 V
6.1 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
28.5 ^OC/W
PACKAGE STYLE .200" 4L PILL
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 0.1 mA
BV_EBO
I_E = 1.0 mA
I_CEO
V_E = 20 V
h_FE
V_CE = 10 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
30
35
3.0
1.0
20
150
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
3.5
5.0
pF
P_G
15
16
dB
η_C
V_CC = 28 V
P_OUT = 1.0 W
f = 400 MHz
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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