MRF260 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON NPN RF POWER TRANSISTOR

MRF260
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF260 is Designed for
VHF Large Signal Power Amplifier
Applications.
PACKAGE STYLE TO-220
MAXIMUM RATINGS
I_C
1.0 A (CONT)
V_CE
P_DISS
T_J
T_STG
θ_JC
18 V
12 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +150 ^OC
14.6 ^OC/W
1 = BASE 2 = EMITTER 3 =
COLLECTOR MOUNTING TAB = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 5.0 mA
I_CBO
V_CE = 15 V
I_EBO
V_EB = 4.0 V
h_FE
V_CE = 5.0 V
I_C = 250 mA
NONE
MINIMUM TYPICAL MAXIMUM
18
36
0.25
1.0
5.0
C_ob
V_CB = 15 V
f = 1.0 MHz
20
G_PE
V_CC = 12.5 V P_out = 5.0 W
η
f = 175 MHz
10
11
55
UNITS
V
V
mA
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1