MRF238 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF238
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF238 is Designed for
13.6 V FM Large-Signal Amplifier
Applications to 175 MHz.
MAXIMUM RATINGS
I_C
5.0 A (CONT)
V_CE
18 V
V_CB
P_DISS
T_STG
60 V
65 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
PACKAGE STYLE .380" 4L STUD
.112x45°
B
E
A
C
E
ØC
B
D
#8-32 UNC-2A
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
M A X IM U M
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 15 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 5.0 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
18
4.0
2.0
5.0
UNITS
V
V
V
mA
---
C_ob
V_CB = 15 V
f = 1.0 MHz
105
130
pF
G_PE
η
V_CC = 13.6 V
P_out = 30 W
f = 160 MHz
9.0
60
10
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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