MRF237 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON NPN RF POWER TRANSISTOR

MRF237
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION: The MRF237 is
designed for large signal power
amplifier applications operating to
225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
I_C
1.0 A
V_CBO
36 V
V_CEO
18 V
P_DISS
8.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
22 °C/W
1 = EMITTER 2 = BASE
3 = COLLECTOR
TRANS1.SYM
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 5.0 mA
BV_EBO
I_C = 1.0 mA
I_CBO
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 250 mA
MINIMUM
18
36
4.0
5.0
C_OB
V_CB = 15 V
f = 1.0 MHz
G_PE
η
V_CC = 12.5 V P_OUT = 4.0 W f = 175 MHz
12
50
TYPICAL
15
14
62
MAXIMUM
.25
20
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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