MRF227 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON NPN RF POWER TRANSISTOR

MRF227
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION: The MRF227 is
designed for large signal power
amplifier applications operating to
225 MHz
MAXIMUM RATINGS
I_C
0.6 A
V_CB
36 V
V_CE
P_DISS
T_J
T_STG
16 V
8 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_EBO
I_C = 1.0 mA
I_CBO
V_CE = 15 V
H_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM
16
36
4.0
TRANS1.SYM
TYPICAL MAXIMUM
1.0
20
200
UNITS
V
V
V
mA
---
C_OB
V_CB = 12.5 V
f = 1.0 MHz
G_PE
P_OUT = 3.0 W V_CE = 12.5 V f = 225 MHz
13.5
15
15
Pf
dB
η
P_OUT = 3.0 W V_CE = 12.5 V f = 225 MHz
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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