MRF1946A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF1946A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF1946A is Designed for
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
• High Common Emitter Power Gain
• Output Power = 30 W
MAXIMUM RATINGS
I_C
8.0 A
V_CE
16 V
V_CB
36 V
P_DISS
100 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.75 °C/W
PACKAGE STYLE .380" 4L STUD
.112x45°
A
B
E
C
E
ØC
B
D
#8-32 UNC-2A
E
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 25 mA
BV_CEO
I_C = 25 mA
BV_EBO
I_E = 5.0 mA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
16
4.0
5.0
40
75
150
UNITS
V
V
V
mA
---
C_ob
V_CB = 15 V
f = 1.0 MHz
75
100
pF
G_PE
V_CC = 12.5 V
P_out = 30 W
f = 175 MHz
10
11
DB
η
60
70
%
ψ
V_CC = 15.5 V
P_IN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
No Degradation in Power Output
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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