MRF185 Datasheet, PDF (1/1 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

MRF185
RF POWER MOSFET
DESCRIPTION:
The ASI MRF185 is a Silicon N-
channel enhancement mode lateral
MOSFET.
FEATURES:
• High Gain, Rigged Device
• Omnigold™ Metalization System
MAXIMUM RATINGS
V_DS
65 V
V_GS
±15 V
P_DISS
250 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.7 °C/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 1.0 µA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
∆V_GS(Q)
I_D = 300 mA
V_DS = 26 V
V_DS(on)
I_D = 3.0 A
V_GS = 3 V
g_fs
I_D = 3.0 A
V_DS = 10 V
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
G_PS
V_DS = 28 V
P_out = 85 W f = 960 MHz
η_D
MINIMUM
65
1.6
11
45
TYPICAL MAXIMUM
1.0
1.0
0.15
0.3
0.75
38
4.6
14
53
UNITS
V
µA
µA
V
V
S
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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