MRF182 Datasheet, PDF (1/1 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MRF182
RF POWER FET TRANSISTOR
DESCRIPTION:
The ASI MRF182 is an RF power field
effect transistor, N-Channel
Enhancement-Mode lateral MOSFET.
FEATURES INCLUDE:
• Bradband performance from HF to 1
GHz
• Omnigold™ Metalization System
• High Gain, Rugged device.
MAXIMUM RATINGS
V_DSS
65 V
V_GS
±20 V
P_D
74 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.75 °C/W
PACKAGE STYLE .350 2L FLG
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 1.0 µA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
V_DS = 10 V
I_D = 100 µA
V_GS(Q)
V_DS = 28 V
I_D = 50 mA
V_DS(on)
V_GS = 10 V
I_D = 3.0 A
g_fs
V_DS = 10 V
I_D = 3.0 A
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
G_PS
V_DD = 28 V
P_{OUT =} 30 W
η
I_DQ = 50 mA
f = 945 MHz
MINIMUM
65
2.0
3.0
1.6
NONE
TYPICAL MAXIMUM
1.0
1.0
3.0
4.0
4.0
5.0
0.9
1.2
1.8
UNITS
V
µA
µA
V
V
V
S
56
28
pF
2.5
11
14
dB
50
58
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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