MRF175GV Datasheet, PDF (1/1 Pages) Advanced Semiconductor – RF POWER FIELD-EFFECT TRANSISTOR

MRF175GV
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The ASI MRF175GV is a N-Channel
Enhancement-Mode Push Pull
MOSFET, Designed for FM, and TV
Solid State Transmitter Applications up
to 500 MHz.
MAXIMUM RATINGS
I_D
26 A
V_DSS
P_DISS
T_J
T_STG
θ_JC
65 V
400 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.44 ^OC/W
PACKAGE STYLE
1 = DRAIN 2 = DRAIN(2) 3 = GATE(1)
4 = GATE(2) 5 = SOURCE (1&2) -CASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_(BR)DSS
I_D = 50 mA
V_GS = 0 V
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D =100 mA
V_DS = 10 V
V_DS(on)
I_D = 5.0 A
V_GS = 10 V
g_fs
I_D = 2.5 A
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
G_ps
η
V_DD = 28 V
I_DQ = 2 X 100 mA
P_OUT = 200 W
ψ
f = 225 MHz
NONE
MINIMUM TYPICAL MAXIMUM
65
2.5
1.0
1.0
3.0
6.0
1.5
2.0
3.0
180
200
20
12
14
55
65
10:1
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UNITS
V
mA
µA
V
V
mhos
pF
dB
%
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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