MRF172 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET N-Channel Enhancement Mode

MRF172
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI MRF172 is Designed for
wideband large-signal output and
driver stages in the 2.0-200 MHz
frequency range.
PACKAGE STYLE .380 4L FLG
FEATURES:
• P_G = 10 dB Min. at 150 MHz
• 30:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
9.0 A
V_DSS
65 V
V_GS
±40 V
P_DISS
220 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.8 °C/W
.112 x 45°
B
A
S
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10830
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_DS = 50 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 50 mA
V_DS = 10 V
g_fs
I_D = 2.5 A
V_DS = 10 V
C_iss
C_oss
C_rss
P_G
η_D
ψ
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
V_DD = 28 V
I_DQ = 50 mA
V_SWR = 30:1 AT ALL PHASE ANGLES
P_out = 80 W
f = 150 MHz
MINIMUM
65
1.0
1.5
NONE
TYPICAL MAXIMUM
5.0
1.0
5.0
UNITS
V
mA
µA
V
mho
200
110
pF
20
10
dB
50
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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