MRF171 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – N-Channel Enhancement Mode TMOS RF FET

MRF171
TMOS RF FET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI MRF171 is a gold metallized
N-Channel Enhancement mode
MOSFET, intended for use in 28 VDC
large signal applications to 200 MHz.
FEATURES:
• P_G = 12 dB min at 150 MHz
• Omnigold™ Metalization System
• 2 – 200 MHz operation
MAXIMUM RATINGS
I_D
4.5 A
V_DSS
65 V
V_DGR
65 V
V_GS
± 40 V
P_DISS
115 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.52 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
S
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_DS = 10 mA
V_GS = 0 V
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 25 mA
V_DS = 10 V
g_fs
I_D = 1 A
V_DS = 10 V
C_iss
C_oss
C_rss
G_ps
η
V_DS = 28 V
V_DD = 28 V
f = 150 MHz
V_GS = 0 V
I_DQ = 25 mA
f = 1.0 MHz
P_out = 45 W
MINIMUM
65
1.0
0.7
NONE
TYPICAL MAXIMUM
5.0
1.0
6.0
UNITS
V
mA
µA
V
mho
55
70
pF
14
12
15
dB
50
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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