MRF161 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON N-CHANNEL RF POWER MOSFET

MRF161
SILICON N-CHANNEL RF POWER MOSFET
DESCRIPTION:
The MRF161 is an Enhancement-
Mode N-Channel MOS Broadband RF
Power Transistor for Wideband Large
Signal Amplifier and Oscillator
Applications from 2.0 to 400 MHz.
MAXIMUM RATINGS
I_D
900 mA
V_DSS
65 V
V_GS
P_DISS
T_J
T_STG
θ_JC
±40 V
17.5 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
10 ^OC/W
PACKAGE STYLE .500 4L FLG
FULL R
A
S
.112x45°
L
D
C
B
G
S
E
H
D
GF
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_(BR)DSS
I_D = 5.0 mA
V_GS = 0 V
I_DSS
V_DSS = 28 V
V_GS = 0 V
I_GSS
V_GS = 40 V
V_DS = 0 V
V_GS(th)
V_DS = 10 V
I_D = 10 mA
g_fs
V_DS = 10 V
I_D = 100 mA
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
NF
V_DS = 28 V
I_D = 100 mA f = 400 MHz
Z_S = 67.7+j = 14.1 Z_L = 14.5+j = 25.7
G_ps
V_DD = 28 V
η
I_DQ = 50 mA P_out = 5.0 W
ψ
V_DD = 28 V
I_DQ = 50 mA P_out = 5.0 W
V_SWR = 30:1 AT ALL PHASE ANGLES
MINIMUM
65
1.0
80
11.0
45
TYPICAL
7.0
9.7
2.3
3.0
NONE
MAXIMUM UNITS
V
1.0
mA
1.0
µA
6.0
V
mmhos
pF
dB
13.5
dB
50
%
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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