MRF160 Datasheet, PDF (1/1 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FET

MRF160
POWE FIELD EFFECT TRANSISTOR
DESCRIPTION:
The MRF160 is an Enhancement-
Mode N-Channel TMOS designed for
wideband large-signal amplifier and
oscillator applications to 500 MHz.
MAXIMUM RATINGS
I_D
0.5 mA
V_DSS
65 V
V_GS
±40 V
P_DISS
8.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
13.2 °C/W
PACKAGE STYLE .280 4L PILL
Style 3
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
V_(BR)DSS
I_D = 5.0 mA
V_GS = 0 V
I_DSS
V_DSS = 28 V
V_GS = 0 V
I_GSS
V_GS = 40 V
V_DS = 0 V
V_GS(th)
V_DS = 10 V
I_D = 10 mA
g_fs
V_DS = 10 V
I_D = 100 mA
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
NF
V_DS = 28 V
I_D = 100 mA f = 400 MHz
Z_S = 67.7+j = 14.1 Z_L = 14.5+j = 25.7
G_ps
η
V_DD = 28 V
P_out = 2.0 W
I_DQ = 100 mA f = 400 MHz
MINIMUM
65
1.0
50
16
45
TYPICAL
3.0
4.2
0.45
3.0
NONE
MAXIMUM UNITS
V
0.5
mA
1.0
µA
6.0
V
mmhos
pF
dB
20
dB
55
%
ψ
V_DD = 28 V
I_DQ = 100 mA P_out = 2.0 W
V_SWR = 30:1 at all phase angles f = 400 MHz
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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