MRF150 Datasheet, PDF (1/1 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

MRF150
SILICON RF POWER MOSFET
DESCRIPTION:
The MRF150 is an N-Channel
Enhancement-Mode MOS Broadband
RF Ppwer Transistor Designed for
Wideband Large Signal Amplifier
Applications From 2.0 to 150 MHz.
MAXIMUM RATINGS
I_D
V_DSS
16 A
125 V
V_GS
P_DISS
T_J
T_STG
θ_JC
± 40 V
300 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
10 ^OC/W
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
S
FULL R
D
C
B
G
S
E
H
D
G
F
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_(BR)DSS
I_D = 100 mA
V_GS = 0 V
I_DSS
V_DSS = 50 V
V_GS = 0 V
I_GSS
V_GS = 20 V
V_DS = 0 V
V_GS(th)
V_DS = 10 V
I_D = 100 mA
g_fs
V_DS = 10 V
I_D = 100 mA
MINIMUM TYPICAL MAXIMUM
125
5.0
1.0
1.0
5.0
4
UNITS
V
mA
µA
V
mho
C_iss
350
C_oss
V_DS = 50 V
V_GS = 0 V
f = 1.0 MHz
250
pF
C_rss
50
G_ps
V_DD = 50 V
I_DQ = 250 mA P_out = 150 W (PEP)
45
17.0
dB
η
Fo = 30 & 30.001 MHz
50
%
ψ
VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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