MRF148A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – N-Channel Enhancement Mode VHF POWER MOSFET

MRF148A
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI MRF148A is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
FEATURES:
• P_G = 15 dB Typ. at 30 W /175 MHz
• η_D = 50% Typ. at 30 W /30 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
6.0 A
V_DSS
120 V
V_DGO
120 V
V_GS
± 40 V
P_DISS
115 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.52 °C/W
.112 x 45°
B
S
A
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
V_GS = 0 V
I_DS = 10 mA
I_DSS
V_GS = 0 V
V_DS = 50 V
I_GSS
V_GS = 20 V
V_DS = 0 V
V_GS(th)
V_DS = 10 V
I_D = 10 mA
V_DS(on)
V_GS = 10 V
I_D = 2.5 A
G_FS
V_DS = 10 V
I_D = 2.5 A
MINIMUM TYPICAL MAXIMUM
125
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1.0
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100
1.0
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5.0
1.0
5.0
800
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UNITS
V
mA
nA
V
V
mS
C_iss
62
C_oss
V_DS = 50 V
V_GS = 0 V
f = 1.0 MHz
35
pF
C_rss
3.0
P_G
V_DD = 50 V
I_DQ = 100 mA
P_OUT = 30 W
18
dB
η_D
f = 30 MHz
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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