MRF141G Datasheet, PDF (1/1 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

MRF141G
RF FIELD-EFFECT POWER TRANSISTOR
DESCRIPTION:
The ASI MRF141G is a Dual
Common Source N-Channel
Enhancement-Mode MOSFET
RF Power Transistor, Designed for
175 MHz, 300 W Transmitter and
Amplifier Applications.
PACKAGE STYLE .385X.850 4LFG
MAXIMUM RATINGS
I_D
32 A
V_DSS
65 V
V_GS
P_DISS
T_J
T_STG
θ_JC
±40 V
500 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
0.35 ^OC/W
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS / EACH SIDE TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 100 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 100 mA
V_DS = 10 V
V_DS(on)
I_D = 10 A
V_GS = 10 V
g_fs
I_D = 5.0 A
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
G_ps
push-pull
η
push-pull
ψ
push-pull
V_DD = 28 V
I_DQ = 500 mA P_out = 300 W
f = 175 MHz
V_DD = 28 V
I_D(max) = 21.4 A P_out = 300 W
f = 175 MHz
V_DD = 28 V
I_DQ = 500 mA P_out = 300 W
f = 175 MHz V_SWR = 5:1 AT ALL PHASE ANGLES
MINIMUM
65
1.0
5.0
12
NONE
TYPICAL MAXIMUM
5.0
1.0
5.0
1.5
350
420
40
UNITS
V
mA
µA
V
V
mhos
pF
dB
45
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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