MRF141 Datasheet, PDF (1/4 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

MRF141
RF FIELD-EFFECT POWER TRANSISTOR
DESCRIPTION:
The MRF141 is a N-Channel
Enhancement-Mode MOSFET
RF Power Transistor Designed for
175 MHz 150 W Transmitter and
Amplifier Applications.
MAXIMUM RATINGS
I_D
16 A
V_DSS
65 V
V_GS
±40 V
P_DISS
300 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
A
FULL R
.112x45°
L
S
D
C
B
G
S
E
H
D
GF
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 100 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 100 mA
V_DS = 10 V
V_DS(on)
I_D = 10 A
V_GS = 10 V
g_fs
I_D = 5.0 A
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
G_ps
V_DD = 28 V I_DQ = 250 mA P_out = 150 W (PEP)
f = 175 MHz
η
IMD_(d3)
IMD_(d11)
V_DD = 28 V I_DQ = 250 mA P_out = 150 W (PEP)
I_D(max) = 5.95 A
f = 30 to 30.001 MHz
ψ
V_DD = 28 V I_DQ = 250 mA P_out = 150 W (PEP)
f₁ =30 to 30.001 MHz
V_SWR = 30:1
MINIMUM
65
1.0
5.0
16
40
TYPICAL
350
420
40
20
10
-30
-60
MAXIMUM
5.0
1.0
5.0
5.0
-28
UNITS
V
mA
µA
V
V
mhos
pF
dB
%
dB
dB
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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