MRF136 Datasheet, PDF (1/1 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

MRF136
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The ASI MRF136 is a N-Channel
Enhancement MOSFET, Designed for
Wideband Large Signal Amplifier
Applications up to 400 MHz.
MAXIMUM RATINGS
I_D
2.5 A
V_DSS
65 V
P_DISS
50 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
3.6 °C/W
PACKAGE STYLE .380 4L FLG
1 = DRAIN 2 = GATE
3 & 4 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_(BR)DSS
I_D = 5.0 mA
V_GS = 0 V
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 40 V
V_GS(th)
I_D = 25 mA
V_DS = 10 V
g_fs
I_D = 250 mA
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
NF
V_DS = 28 V
I_D = 0.5 A
f = 150 MHz
G_ps
V_DD = 28 V
P_out = 15 W
η
I_DQ = 25 mA
f = 150 MHz
ψ
V_DD = 28 V
P_out = 15 W
f = 150 MHz
I_DQ = 25 mA VSWR 30:1 @ ALL PHASE ANGLES
MINIMUM TYPICAL MAXIMUM
65
2.0
1.0
1.0
3.0
6.0
250
400
UNITS
V
mA
µA
V
mmhos
24
25
pF
5.5
1.0
dB
12
16
dB
50
60
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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