MRF134-39 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET

MRF134-39
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI MRF134-39 is intended for
use in 28 VDC large signal
Applications, from 2.0 to 400 MHz.
FEATURES INCLUDE:
• P_G = 14 dB Typical at 150 MHz
• Omnigold™ Metalization System
• Class-A or AB
MAXIMUM RATINGS
I_D
0.9 A
V_DSS
65 V
V_DGR
65 V
V_GS
±40 V
P_DISS
17.5 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
10 °C/W
PACKAGE STYLE TO-39
1 = Drain 2 = Gate 3 = Source
COMMON SOURCE CONFIGURATION
BOTTOM VIEW
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_DS = 5.0 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 10 mA
V_DS = 10 V
g_fs
I_D = 100 mA
V_DS = 10 V
C_iss
C_oss
C_rss
P_G
η_D
NF
V_GS = 28 V
V_DD = 28 V
P_IN = 0.39 W
I_D = 28 V
V_DS = 0 V
I_DQ = 50 mA
V_DS = 28 V
f = 1.0 MHz
P_out = 5.0 W
f = 150 MHz
f = 150 MHz
MINIMUM
65
1.0
.08
NONE
TYPICAL MAXIMUM
1.0
1.0
6.0
0.11
UNITS
V
mA
µA
V
mho
7.0
9.7
pF
2.3
11
14
dB
50
55
%
2.0
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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