MRF1150MB Datasheet, PDF (1/2 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

MRF1150MB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF1150MB is Designed
for Class B and C, TACAN, IFF, and
DME Applications up to 1090 MHz.
FEATURES:
• Class B and C Operation
• Common Base
• P_G = 7.8 dB at 150 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
12 A
V_CB
70 V
P_DISS
T_J
T_STG
θ_JC
583 W @ T_C = 25°C
-65 ^OC to +200 °C
-65 ^OC to +150 °C
0.3 ^OC/W
PACKAGE STYLE .280 4L PILL
A
B
ØB
C
B
E
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 5.0 mA
I_CBO
V_CB = 50 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
70
70
4.0
10
10
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 50 V
P_OUT = 150 W
7.8
f = 1090 MHz
35
9.8
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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