MRF1090MB Datasheet, PDF (1/1 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

MRF1090MB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF1090MB is Designed
for
High Peak power & low duty cycle,
IFF, DME, and TACAN Applications.
FEATURES:
• Internal Input Matching Network
• P_G = 8.4 dB at 90 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
1.0 A PEAK
V_CB
55 V
P_DISS
292 W @ 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.6 °C/W
PACKAGE STYLE .280 4L PILL (A)
A
.100x45°
C
B
ØG
D
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
.195 / 4.95
C
1.000 / 25.40
D
.004 / 0.10
E
.050 / 1.27
F
G
.275 / 6.99
F
E
MAXIMUM
inches / mm
.105 / 2.67
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
.285 / 7.21
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 25 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CB = 50 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_OB
V_CE = 50 V
f = 1.0 MHz
MINIMUM
65
65
3.5
10
TYPICAL MAXIMUM
100
200
40
UNITS
V
V
V
mA
---
pF
P_G
V_CC = 50 V P_OUT = 90 W f = 1025 - 1150 MHz
8.4
η_C
P_IN = 13 W
38
dB
%
Pulse with = 10 µS, Duty Cycle = 1.0 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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