MRF1035MB Datasheet, PDF (1/1 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTORS

MRF1035MB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF1035MB is Designed
for Class C, DME/TACAN Applications
up to 1090 MHz.
FEATURES:
• Internal Input Matching Network
• P_G = 10 dB at 35 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.0 A
V_CBO
60 V
V_CES
60 V
P_DISS
35 W PEAK
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
5.0 °C/W
PACKAGE STYLE .280 4L PILL (A)
A
C .100x45°
C
B^B
E
D
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
.195 / 4.95
C
1.000 / 25.40
D
.004 / 0.10
E
.050 / 1.27
F
G
.275 / 6.99
B
ØG
F
E
MAXIMUM
inches / mm
.105 / 2.67
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
.285 / 7.21
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CES
I_C = 20 mA
BV_EBO
I_E = 2.0 mA
I_CBO
V_CE = 50 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
C_ob
V_CB = 50 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
60
60
4.0
2.0
10
100
10
15
UNITS
V
V
V
mA
---
pF
P_G
V_CC = 50 V P_OUT = 35 W
η_C
f = 1090 MHz
10
12.4
30
34
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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