MRF10350 Datasheet, PDF (1/1 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

MRF10350
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF10350 is Designed for
TCAS/TACAN Applications
up to 1090 MHz.
FEATURES:
• Internal Input Matching Network
• P_G = 8.5 dB at 350 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
31 A
V_CBO
65 V
V_CES
65 V
P_DISS
1590 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
0.11 °C/W
PACKAGE STYLE .400 2NL FLG
A
2X B
ØD
C
F
C ^{4x .062 x 45°}
.025 x 45°
E
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
H^B
G
I
J
K
L
M IN IM U M
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
E
.193 / 4.90
.450 / 11.43
.125 / 3.18
B
P
MN
M A X IM U M
inches / mm
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 60 mA
BV_CES
I_C = 60 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CE = 36 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
3.5
25
20
UNITS
V
V
V
mA
---
P_G
V_CC = 50 V
η_C
P_OUT = 350 W
f = 1090 MHz
8.5
40
9.0
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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