MRF1004MB Datasheet, PDF (1/1 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTORS NPN SILICON

MRF1004MB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF1004MB is Designed for
Class B and C, TACAN, IFF, and DME
Applications up to 1090 MHz.
FEATURES:
• Class B and C Operation
• Common Base
• P_G = 10 dB at 4.0 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
250 mA
V_CE
20 V
P_DISS
T_J
T_STG
θ_JC
7.0 W @ T_C = 25°C
-65 ^OC to +200 °C
-65 ^OC to +150 °C
25.0 ^OC/W
PACKAGE STYLE .280 4L PILL
A
B
ØB
C
B
E
ØC
D
EF
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.275 / 6.99
D
.004 / 0.10
E
.050 / 1.27
F
.118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 5.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 35 V
h_FE
V_CE = 5.0 V
I_C = 75 mA
MINIMUM TYPICAL MAXIMUM
50
20
3.5
0.5
10
100
UNITS
V
V
V
mA
---
P_G
V_CC = 35 V
η_C
10
P_OUT = 4.0 W
f = 1090 MHz
40
11
45
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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