MRF1002MB Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRF1002MB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF1002MB is Designed for
Class C, DME/TACAN Applications up to
1150 MHz.
FEATURES:
• Class C Operation
• P_G = 9.0 dB at 2.0 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
250 mA
V_CEO
20 V
V_CBO
50 V
P_DISS
7.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
25 °C/W
PACKAGE STYLE .280 4L PILL (A)
C
B3
A
.100x45°
1
4
ØG
2
D
F
E
D IM
A
B
C
D
E
F
G
M INIM UM
inches / m m
.095 / 2.41
.195 / 4.95
1.000 / 25.40
.004 / 0.10
.050 / 1.27
.275 / 6.99
M AX IM U M
inches / m m
.105 / 2.67
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
.285 / 7.21
1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 5.0 mA
BV_CES
I_C = 5.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 35 V
h_FE
V_CE = 5.0 V
I_C = 100 A
C_OB
V_CB = 35 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
20
50
50
3.5
0.5
10
100
2.5
5.0
UNITS
V
V
V
V
mA
---
pF
P_G
η_C
V_CC = 35 V P_OUT = 2.0 W
f = 1090 MHz
10
12
40
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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