MRF1001A Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MRF1001A is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I_C
200 mA
V_CE
20 V
P_DISS
1.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
175 °C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
NONE
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 1.0 mA
BV_EBO
I_C = 100 µA
I_CBO
V_CB = 10 V
I_EBO
V_EB = 3.5 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
V_CE(SAT)
I_C = 50 mA
I_B = 10 mA
MINIMUM
20
30
3.5
50
f_t
V_CE = 14 V
I_C = 90 mA
f = 300 MHz
G_Umax
MAG
V_CC = 14 V
f = 300 MHz
I_C = 90 mA
P_out = 1.0 W
|S₂₁|²
10
TYPICAL MAXIMUM
50
100
300
100
3.0
11.5
11.7
11.13
UNITS
V
V
V
µA
µA
---
V
GHz
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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