MRAL2023-6 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

MRAL2023-6
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRAL2023-6 is a Common
Base Device Designed for class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
I_C
1.25 A
V_CES
40 V
P_DISS
21 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
8.0 °C/W
PACKAGE STYLE .250 2L FLG (C)
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 50 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 22 V
h_FE
V_CE = 5.0 V I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
40
3.5
1.25
10
90
UNITS
V
V
mA
---
C_OB
V_CB = 22 V
f = 1.0 MHz
10
pF
P_G
η_C
6.8
V_CE = 22 V P_OUT = 6.0 W f = 2000 to 2300 MHz
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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